Semiconductor device having wiring layers integrally formed with an interlayer connection plug and method of manufacturing the same

摘要

To form an interconnection between an upper wiring layer 9 and a lower wiring layer 8 of a semiconductor device, a conductive material 7, 8, which may comprise more than one layer, but has uniform etching characteristics is deposited in a trench formed in an insulation film 3 that will insulate the upper wiring layer from the lower wiring layer. The lower wiring layer and the plug are etched form the deposited conductive material using a resist pattern. The wiring structure does not include an etching stopper at the boundary between the lower wiring layer and the plug.