发明名称 |
Method and circuit for driving power transistors in a half bridge configuration allowing for excessive negative swing of the output node and integrated circui |
摘要 |
A method and circuit for driving power transistors arranged in series in a half bridge configuration allowing for excessive negative swing of an output node between the transistors in the half bridge configuration. The series transistors are connected between a first voltage source and a common potential. A second voltage reference source is also provided. A terminal is connected to a common point coupled to anodes of intrinsic diodes of driver circuits for the power transistors. The second voltage source is connected between the common potential and the terminal so as to shift the level of the common point such that the intrinsic diodes will not forward bias due to negative output node transients generated by diode forward recovery and stray inductances. The circuit of the invention can also be incorporated in an integrated circuit including a single chip, e.g., a silicon chip. |
申请公布号 |
GB2300532(B) |
申请公布日期 |
1999.09.22 |
申请号 |
GB19960009472 |
申请日期 |
1996.05.07 |
申请人 |
* INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
CHONGWOOK CHRIS * CHOI;DAVID * TAM |
分类号 |
H01L27/088;H01L21/8234;H02M1/08;H03F1/52;H03K17/06;H03K17/687;(IPC1-7):H03K17/687 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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