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发明名称
制造一复合材料及选择一晶圆的方法
摘要
本发明系有关制造复合材料晶圆的方法,特别是绝缘体上矽型晶圆,其包含下列步骤:提供二晶圆并且使一晶圆连结,特别是黏合至另一者,而且其中为了减少晶圆边缘上面或附近引起的结晶缺陷量,进行测定边缘下降值的步骤,其中在离该晶圆边缘约0.5至2.5毫米处测定及/或使用高度外廓的二次导数测定该边缘下降值。本发明亦系有关选择晶圆的方法,并且有关此晶圆在复合材料晶圆的制造方法中之用途。
申请公布号
TW200737287
申请公布日期
2007.10.01
申请号
TW095141057
申请日期
2006.11.06
申请人
S?O?I?TEC 绝缘层上矽科技公司
发明人
鲁杜维克伊卡那特;威利米切尔;派克瑞劳德;瓦特史瓦季巴哈
分类号
H01L21/00(2006.01)
主分类号
H01L21/00(2006.01)
代理机构
代理人
陈展俊;林圣富
主权项
地址
法国
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