| 摘要 |
PROBLEM TO BE SOLVED: To provide a ZnO base sintered compact for a sputtering target which enables efficient formation of films having high transmittance, low resistivity, little production of abnormal discharge during DC sputtering over a long time, excellent characteristics and which is excellent in productivity and inexpensive. SOLUTION: This sintered compact contains 3 to 7 atom.% Ga and 0.3 to 3 atom.% one or more kinds of third elements selected from the group consisting of Al, B, In, Ge, Si, Sn and Ti and substantially consists of the complex oxide of zinc, gallium and the third elements above described. Preferably, the ZnO sintered compact has >=4.8 g/cm<3> sintering density and 4 to 15μm average crystal grain size of the complex oxide.
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