发明名称 |
Circuit layout for improved performance while preserving or improving density |
摘要 |
In one embodiment, a circuit may be formed by forming at least one bent-gate output stage transistor and at least one bent-gate input stage transistor. The bent-gate output stage transistor may be electrically isolated from an input to the bent-gate input stage transistor by forming at least one bent-gate grounded-gate transistor between the bent-gate output stage transistor and the input to the bent-gate input stage transistor.
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申请公布号 |
US7301182(B1) |
申请公布日期 |
2007.11.27 |
申请号 |
US20050226695 |
申请日期 |
2005.09.13 |
申请人 |
LATTICE SEMICONDUCTOR CORPORATION |
发明人 |
METZGER LARRY;ILGENSTEIN KERRY;MEHTA SUNIL |
分类号 |
H01L27/10 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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