发明名称 Circuit layout for improved performance while preserving or improving density
摘要 In one embodiment, a circuit may be formed by forming at least one bent-gate output stage transistor and at least one bent-gate input stage transistor. The bent-gate output stage transistor may be electrically isolated from an input to the bent-gate input stage transistor by forming at least one bent-gate grounded-gate transistor between the bent-gate output stage transistor and the input to the bent-gate input stage transistor.
申请公布号 US7301182(B1) 申请公布日期 2007.11.27
申请号 US20050226695 申请日期 2005.09.13
申请人 LATTICE SEMICONDUCTOR CORPORATION 发明人 METZGER LARRY;ILGENSTEIN KERRY;MEHTA SUNIL
分类号 H01L27/10 主分类号 H01L27/10
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