| 摘要 |
The invention concerns a thin layer semi-conductor structure including a semi-conductor surface layer ( 2 ) separated from a support substrate ( 1 ) by an intermediate zone ( 3 ), the intermediate zone ( 3 ) being a multi-layer electrically insulating the semi-conductor surface layer from the support substrate. The intermediate zone has a considered sufficiently good electrical quality of interface with the semi-conductor surface layer and includes at least one first layer, of satisfactory thermal conductivity to provide a considered as correct operation of the electronic device or devices which are to be elaborated from the semi-conductor surface layer ( 2 ), the intermediate zone including additionally a second insulating layer of low dielectric constant, located between the first layer and the support substrate.
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