| 摘要 |
Disclosed herein is a cleaning processing method in which an object to be processed is mounted on a susceptor in a process chamber of a CVD apparatus, a TiCl4 gas, a H2 gas, and a Ar gas are introduced, a Ti film is formed on a surface of the object to be processed in a region of a plasma generated, the object to be processed is conveyed out of the process chamber, supply of the H2 gas and the Ar gas is thereafter stopped without generating a plasma, and the TiCl4 gas is introduced by means of a carrier gas, to remove unnecessary Ti films sticking to the inside of the film forming apparatus.
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