Method for improvement of TiN CVD film quality

摘要

A method of depositing a low carbon content, high density TiN thin film on a substrate. A substrate is placed within a deposition chamber, and the pressure within the deposition chamber is adjusted to the deposition pressure. A portion of the total thickness desired of the TiN thin film is deposited. The portion of the TiN thin film contains an amount of carbon. Carbon is scavenged from the portion of the TiN thin film deposited by introducing scavenger gases into the deposition chamber. The scavenger gases are chosen so as to be reactive with carbon. The pressure within the deposition chamber is adjusted to the scavenger pressure, and a plasma of the scavenger gases is created within the deposition chamber. The steps from deposition through scavenging are repeated until the desired thickness of TiN is deposited, and the substrate having the desired thickness of TiN deposited thereon is removed from the deposition chamber.