发明名称 |
Self-aligned wordline keeper and method of manufacture therefor |
摘要 |
A word line structure, and method of manufacture therefor, for a monolithically formed magnetoresistive memory device having a magnetic field sensitive bit region. In a preferred embodiment, the word line structure includes a dielectric layer having an etched cavity formed therein, wherein the cavity has a bottom surface and two spaced side surfaces. A magnetic field keeper is provided adjacent to the back and/or side surfaces of the cavity. A conductive word line is also provided in the cavity and adjacent to the magnetic field keeper to at least substantially fill the cavity. A polishing step may be used to remove any portion of the magnetic field keeper and/or conductive word line that lie above the top surface of the dielectric layer to provide a planer top surface.
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申请公布号 |
US5956267(A) |
申请公布日期 |
1999.09.21 |
申请号 |
US19970993009 |
申请日期 |
1997.12.18 |
申请人 |
HONEYWELL INC |
发明人 |
HURST, ALLAN T.;VAVRA, WILLIAM |
分类号 |
G11C11/14;H01L21/8246;H01L27/22;(IPC1-7):G11C11/00;G11C11/15 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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