| 发明名称 |
Method of manufacturing a semiconductor device |
| 摘要 |
A method of manufacturing a semiconductor device, comprises the steps of: forming an amorphous silicon film on a substrate having an insulating surface; processing said amorphous silicon film by plasma of a gas that mainly contains hydrogen or helium; and giving an energy to said amorphous silicon film.
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| 申请公布号 |
US5956581(A) |
申请公布日期 |
1999.09.21 |
| 申请号 |
US19960616623 |
申请日期 |
1996.03.15 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;TERAMOTO, SATOSHI;KUSUMOTO, NAOTO;OHNUMA, HIDETO |
| 分类号 |
H01L21/20;H01L21/30;H01L21/336;H01L21/77;H01L21/84;(IPC1-7):H01L21/324 |
主分类号 |
H01L21/20 |
| 代理机构 |
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