发明名称 |
Semiconductor memory device capable of setting substrate voltage shallow in disturb test mode and self refresh mode |
摘要 |
A switching circuit is provided which activates a shallow level detector and inactivates a deep level detector when a disturb test signal or a self refresh signal is activated. Accordingly, a shallow substrate voltage at the same level as a detection level of the shallow level detector can be generated by a substrate voltage generating circuit not only in a disturb test mode but also in a self refresh mode. As a result, the area penalty due to the shallow level detector is reduced.
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申请公布号 |
US5956281(A) |
申请公布日期 |
1999.09.21 |
申请号 |
US19980039270 |
申请日期 |
1998.03.16 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NAKAI, JUN;HAYASHIKOSHI, MASANORI |
分类号 |
G11C11/407;G11C5/14;G11C11/401;G11C11/403;G11C11/408;G11C29/50;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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