| 摘要 |
An apparatus for removing oxide from a silicon substrate having a silicon substrate temperature including an evaporation chamber having at least one inlet and at least one outlet, whereby a carrier gas can be passed through the evaporation chamber from the inlet to the outlet, means for introducing a preselected charge of a hydrous cleaning solution into the evaporation chamber, means for heating the preselected charge of the liquid cleaning solution to evaporate the charge completely and thereby form a mixture of vapors with the carrier gas flowing through the evaporation chamber, a heat exchanger connected to the outlet of the evaporation chamber for lowering the temperature or the mixture to below the silicon substrate temperature, a process chamber for holding the silicon substrate, the process chamber having an inlet connected to the heat exchanger and an outlet and an exhaust controller connected to the outlet of the process chamber for removing gas mixture from the process chamber.
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