发明名称 |
Method of programming, erasing, and reading block lock-bits and a master lock-bit in a flash memory device |
摘要 |
A method of writing to flash memory cells in a flash memory device. The flash memory device includes a first memory array and a second independent memory array. The first memory array includes memory blocks each having a memory cell. The second independent memory array includes block lock-bits each corresponding to one of the memory blocks. The method of writing to a memory cell in one of the memory blocks of the first memory array includes the steps of issuing a command to write to the memory cell, determining if a corresponding block lock-bit in the second independent memory array is set, and writing to the memory cell if the corresponding block lock-bit is not set.
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申请公布号 |
US5954818(A) |
申请公布日期 |
1999.09.21 |
申请号 |
US19970794840 |
申请日期 |
1997.02.03 |
申请人 |
INTEL CORPORATION |
发明人 |
DALVI, VISHRAM PRAKASH;ROZMAN, RODNEY R.;HAID, CHRISTOPHER JOHN;KREIFELS, JERRY;TSANG, JOSEPH;EVERTT, JEFF;JAVANIFARD, JAHANSHIR J.;PETERSON, JEFFREY J. |
分类号 |
G06F12/14;G11C16/22;(IPC1-7):G06F11/00 |
主分类号 |
G06F12/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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