| 发明名称 |
Method of depositing thin films by plasma-enhanced chemical vapor deposition |
| 摘要 |
A method of depositing a thin film on a substrate by plasma-enhanced CVD is provided. The method includes introducing H2 or H2 and N2 into a plasma-enhanced CVD reactor; generating a plasma in the reactor; introducing a reaction gas comprising TiCl4, silane, and either H2 or H2 and N2 into the reactor; and depositing a Ti film or a TiN film containing Si on a substrate in the reactor.
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| 申请公布号 |
US5956616(A) |
申请公布日期 |
1999.09.21 |
| 申请号 |
US19970863298 |
申请日期 |
1997.05.27 |
| 申请人 |
ANELVA CORPORATION |
发明人 |
MIZUNO, SHIGERU;TAGAMI, MANABU;HASEGAWA, SHINYA;NUMASAWA, YOICHIRO;ISHIHARA, MASAHITO;NASHIMOTO, KIYOSHI;TAKAHASHI, NOBUYUKI |
| 分类号 |
C23C16/34;C23C16/42;C23C16/50;H01L21/28;H01L21/285;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
C23C16/34 |
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