发明名称 |
Post-CMP wet-HF cleaning station |
摘要 |
The present invention provides a method for cleaning semiconductor work pieces following a Chemical Mechanical Planarization ("CMP") procedure. Initially, a work piece is scrubbed to remove some of the slurry material and other contaminants on the surfaces of the work piece. Next, the work piece is transported into a HF cleaning station wherein the work piece is positioned horizontally such that both the upper and lower surfaces are substantially exposed. The work piece then is immersed in a hydrogen fluoride ("HF") solution which is circulated around the various surfaces of the work piece. The work piece is immersed in the HF solution for a sufficient length of time to remove an appropriate layer of oxide, thereby removing contaminants and smoothing micro scratches from the surfaces of the work piece.
|
申请公布号 |
US5954888(A) |
申请公布日期 |
1999.09.21 |
申请号 |
US19980020979 |
申请日期 |
1998.02.09 |
申请人 |
SPEEDFAM CORPORATION |
发明人 |
GUPTA, ANAND;KARLSRUD, CHRIS;GOPALAN, PERIYA |
分类号 |
H01L21/00;H01L21/3105;(IPC1-7):C23G1/02 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|