发明名称 Cryogenic high pressure sensor module
摘要 A pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.
申请公布号 US5955678(A) 申请公布日期 1999.09.21
申请号 US19970992972 申请日期 1997.12.18
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION 发明人 CHAPMAN, JOHN J.;SHAMS, QAMAR A.;POWERS, WILLIAM T.
分类号 G01L9/00;G01L15/00;G01L19/06;(IPC1-7):G01L7/00 主分类号 G01L9/00
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