| 摘要 |
A pattern determination method includes a step for setting an interconnection width and the like, a step for representing the mask pattern and aperture configuration in functions, steps for calculating amplitude distribution of exposure light, a step for calculating intensity distribution of exposure light at an image plane, steps for calculating maximum, minimum, and reference intensity of exposure light, a step for determining exposure margin and focus margin, a step for storing data of qualification/disqualification of optical image formation, and a step for providing a display of a table. A configuration including four openings is set for the aperture. Determination of whether an optical image of an interconnection pattern can be formed or not is facilitated by the table in setting the interconnection pattern of a semiconductor device.
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