Semiconductor light emitting device and method of etching

摘要

A vertical cavity type semiconductor light emitting device includes: a light emitting layer made of a II-IV group compound semiconductor material; a first II-VI group compound semiconductor layer which has an opening at a position corresponding to the inside of the light emitting layer; and an upper mirror and a lower mirror which are provided so as to interpose the light emitting layer therebetween. A current is injected through the opening into the light emitting layer.