| 摘要 |
PROBLEM TO BE SOLVED: To efficiently form a conductive thin film having a uniform and sufficient nucleus density. SOLUTION: Ion species of a metal are formed by acting rare earth excitation species or/and electrons on gas contg. a metal. The metal ions are deposited on a substrate and with these ions as growth nuclei, the conductive thin film is formed by CVD, PVC, electrolytic plating, etc. More particularly this method is effective as a method of forming the conductive thin film on a semiconductor substrate having connection holes, in which a copper thin film is formed by usingβ-ketonato copper as a gaseous raw material.
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