发明名称 |
Process of forming a field effect transistor without spacer mask edge defects |
摘要 |
A field effect transistor which is not susceptible to mask edge detects at its gate spacer oxides. The transistor is formed upon a semiconductor substrate through successive layering of a gate oxide, a gate electrode and a gate cap oxide. A pair of curved gate spacer oxides are then formed covering opposite edges of the stack of the gate oxide, the gate electrode and the gate cap oxide. The semiconductor substrate is then etched to provide a smooth topographic transition from the gate spacer oxides to the etched semiconductor surface. Source/drain electrodes are then implanted into the etched semiconductor substrate and annealed to yield the finished transistor. A second embodiment of the field effect transistor possesses a polysilicon gate. Alter removal of the gate cap oxide, a metal layer may be deposited and sintered upon the polysilicon gate and the source/drain electrodes. The metal salicide layers formed upon the electrodes of the transistor have limited susceptibility to parasitic current leakage.
|
申请公布号 |
US5956590(A) |
申请公布日期 |
1999.09.21 |
申请号 |
US19970907242 |
申请日期 |
1997.08.06 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HSIEH, YONG-FEN;CHEN, SHU-JEN;KO, JOE |
分类号 |
H01L21/265;H01L21/266;H01L21/336;H01L29/08;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|