发明名称 |
Use of argon sputtering to modify surface properties by thin film deposition |
摘要 |
A method of selectively and simultaneously depositing a non-reactive material such as a polyimide polymer to vertical sidewalls of a mesa-like structure is provided. The method of the present invention is useful in providing a modified mesa-like structure which prevents the flow of a reactive material along the vertical sidewalls of the mesa-like structure. |
申请公布号 |
US5956573(A) |
申请公布日期 |
1999.09.21 |
申请号 |
US19970785186 |
申请日期 |
1997.01.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DINAN, THOMAS E.;MATHAD, SWAMI;TOTTA, PAUL A.;WILDMAN, HORATIO S. |
分类号 |
H01L21/60;H01L21/768;H01L23/485;H01L23/532;(IPC1-7):H01L21/203 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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