发明名称 Use of argon sputtering to modify surface properties by thin film deposition
摘要 A method of selectively and simultaneously depositing a non-reactive material such as a polyimide polymer to vertical sidewalls of a mesa-like structure is provided. The method of the present invention is useful in providing a modified mesa-like structure which prevents the flow of a reactive material along the vertical sidewalls of the mesa-like structure.
申请公布号 US5956573(A) 申请公布日期 1999.09.21
申请号 US19970785186 申请日期 1997.01.17
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 DINAN, THOMAS E.;MATHAD, SWAMI;TOTTA, PAUL A.;WILDMAN, HORATIO S.
分类号 H01L21/60;H01L21/768;H01L23/485;H01L23/532;(IPC1-7):H01L21/203 主分类号 H01L21/60
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