PROCESS DETECTING IONIZING RADIATION, DETECTOR AND USE OF FIELD-EFFECT METAL-OXIDE-SEMICONDUCTOR TRANSISTOR IN IT

摘要

FIELD: detection of ionizing radiation. SUBSTANCE: uncovered section 17 is created on surface of floating gate of field-effect MOS transistor that forms detector. Field-effect MOS transistor is so used that charge is formed on its floating gate and this charge changes as result of ionizing radiation to which transistor is subjected. Radiation dose is determined by change that takes places in charge on gate. For increase of sensitivity and expansion of range of measured doses when ionizing radiation is detected there is provided possibility of exertion of effect of radiation on surface of floating gate 13 of field-effect MOS transistor 10 through air or gas space. EFFECT: increased sensitivity of detector and expanded range of measured doses of ionizing radiation. 13 cl, 7 dwg