| 摘要 |
FIELD: manufacture of synthetic superhard materials, viz.: diamond, cubical boron nitride and composite materials on their bases. SUBSTANCE: device has two matrices mounted coaxially and directed towards each other by recesses with spherical dimples which are engageable with taper surfaces forming high-pressure chamber inside which container is placed. Matrices have taper or flat surface towards periphery from recesses where circular projections are located. Dimples have various heights H<SB>1</SB> and H<SB>2</SB>, taper surfaces have different taper angles alpha<SB>1</SB> and alpha<SB>2</SB>; taper surfaces made at different angles beta<SB>1</SB> and beta<SB>2</SB> run to periphery of matrices forming punch-matrix at different diameters of dimples d<SB>d1</SB> and d<SB>d2</SB>. Circular projections have lesser heights as compared with central circular taper projections by no more than 12% of depth of dimples H<SB>1</SB> and H<SB>2</SB>; projections are made at relationship of <EMI ID=0.469 HE=12 WI=30 TI=CHI>, where d<SB>pr</SB> is diameter of circular projection and d<SB>d1</SB> is diameter of dimple of punch-matrix. EFFECT: increased pressure in chamber at lesser force of press; improved control. 6 cl, 2 dwg |
