发明名称 Gas switching during an etch process to modulate the characteristics of the etch
摘要 Gas switching is used during an etch process to modulate the characteristics of the etch. The etch process comprises a sequence of at least three steps, wherein the sequence is repeated at least once. For example, the first step may result in a high etch rate of oxide ( 108 ) while the second step is a polymer coating steps and the third step results in a low etch rate of oxide and high etch rate of another material ( 114 ) and/or sputtering.
申请公布号 US2008090423(A1) 申请公布日期 2008.04.17
申请号 US20070923852 申请日期 2007.10.25
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 JIANG PING;CELII FRANCIS
分类号 H01L21/31 主分类号 H01L21/31
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