发明名称 |
Capicitor Using Binary Metal Electrode, Semiconductor Device Having The Capacitor And Method of Fabricating The Same |
摘要 |
A capacitor includes a first electrode having a conductive pattern and an anti-oxidation pattern contacting the conductive pattern and a second electrode overlapping the first electrode. The capacitor further includes a capacitor dielectric layer disposed between the first and second electrodes, and having a blanket dielectric layer and a partial dielectric layer. The blanket dielectric layer is disposed between the first and second electrodes, and the partial dielectric layer is disposed between the blanket dielectric layer and the anti-oxidation pattern.
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申请公布号 |
US2008087930(A1) |
申请公布日期 |
2008.04.17 |
申请号 |
US20070733943 |
申请日期 |
2007.04.11 |
申请人 |
LEE JONG-CHEOL;IM KI-VIN;CHOI HOON-SANG;CHUNG EUN-AE;KANG SANG-YEOL |
发明人 |
LEE JONG-CHEOL;IM KI-VIN;CHOI HOON-SANG;CHUNG EUN-AE;KANG SANG-YEOL |
分类号 |
H01L27/108;H01G4/008;H01L21/20 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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