| 摘要 |
<p>A Ge-added SiO2 thin film (12) is formed on a glass substrate (10), and a metal film (14) is formed thereon (S11 to S13). By etching the metal film (14), a pair of electrodes (14a, 14b) mutually opposed at a predetermined interval is formed (S14). An insulating thin film (16) is formed on the insulating film (12) and the electrodes (14a, 14b) (S15). While applying ultraviolet radiation, a high voltage is applied between the electrodes (14a, 14b) to perform ultraviolet excitement polling to impart an optical nonlinearity to a channel region (18) (S16). By controlling the voltage application to the channel region (18) having the optical nonlinearity, the light transmitted through the channel region (18) is controlled. Thus, an optical nonlinear waveguide for propagating single mode light is formed on a glass substrate.</p> |
