发明名称 |
Hochspannung-MIS-Feldeffekttransistor |
摘要 |
A high voltage MIS field effect transistor includes a semiconductor substrate of a first conductivity type; a semiconductor layer of a second conductivity type formed on an obverse surface side of the semiconductor substrate; a base layer of the first conductivity type formed in the semiconductor layer; a source layer of the second conductivity type formed in the base layer; a source electrode abutting the source layer; a gate electrode formed in such a manner as to extend from the source layer to the semiconductor layer via an insulating gate film; a drain section including a drain layer of the second conductivity type formed in the semiconductor layer in such a manner as to be spaced apart from the source layer; and a low-concentration region of the first conductivity type being formed in a vicinity of a periphery of a base corner portion of said base layer. Another low-concentration region of the second conductivity type is further formed in a vicinity of a periphery of a drain corner portion of the base layer. <IMAGE> |
申请公布号 |
DE69418365(T2) |
申请公布日期 |
1999.09.16 |
申请号 |
DE1994618365T |
申请日期 |
1994.02.14 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
FUJISHIMA, NAOTO;KITAMURA, AKIO |
分类号 |
H01L29/06;H01L29/417;H01L29/78 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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