METHOD FOR FABRICATING THIN FILM TRANSISTOR SUBSTRATE

摘要

A method for fabricating a TFT(thin film transistor) substrate is provided to avoid notching by adding hydrogen in forming a lower insulation layer, and to prevent a step open by using a multi slit in a connection region of a pixel electrode and a drain electrode. A gate interconnection is formed on a substrate. A first insulation layer(162) with added hydrogen is formed on the gate interconnection. A semiconductor layer and a data interconnection are formed on the first insulation layer. A second insulation layer is formed on the data interconnection. A photoresist layer(230) is formed on the second insulation layer, and an exposure and development process is performed to form a photoresist pattern in a manner that all the photoresist pattern in a contact hole formation region is removed and the photoresist pattern in a pixel electrode formation region is left by the same thickness. A blanket etch process is performed on the photoresist pattern to form a contact hole. After a light-transmitting conductive layer is formed on the resultant structure, the light-transmitting conductive layer on the photoresist pattern is lifted-off to form a pixel electrode. The light-transmitting conductive layer can be formed after the substrate is cleaned.