发明名称 |
SELECTIVE WET ETCHING OF INORGANIC ANTIREFLECTIVE COATINGS |
摘要 |
The present invention relates to the fabrication of integrated circuit devices, and more particularly, to a method of etching iorganic antireflective layers without etching excessive amounts of an underlying oxide. According to one aspect of the present invention, the antireflective layer is selectively etched using an etchant which comprises about 35-40 wt.% NH4F and about 0.9-5.0 wt.% H3PO4 in an aqueous solution.
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申请公布号 |
WO9946808(A1) |
申请公布日期 |
1999.09.16 |
申请号 |
WO1999US01696 |
申请日期 |
1999.01.28 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
TOREK, KEVIN, JAMES;WHONCHEE, LEE;SATISH, BEDGE |
分类号 |
H01L21/306;H01L21/027;H01L21/311;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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