发明名称 Semiconductor DRAM component with integral test circuit
摘要 The component, consisting of a DRAM (11) and logic unit (12) comprising a faulty chip recognition circuit (2). If the chip is recognized as faulty, the faulty data can be written into the recognition circuit. The faulty chip recognition circuit is formed on one surface of the semiconductor substrate (1). An Independent claim is also included for the testing process.
申请公布号 DE19819254(A1) 申请公布日期 1999.09.16
申请号 DE1998119254 申请日期 1998.04.29
申请人 MITSUBISHI DENKI K.K. 发明人 KAWANO, KENJI
分类号 H01L21/822;G11C29/00;G11C29/44;H01L21/48;H01L21/82;H01L23/544;H01L27/04 主分类号 H01L21/822
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