| 摘要 |
[PROBLEMS] To enhance the resolution of patterning of a light shielding film. [MEANS FOR SOLVING PROBLEMS] A mask blank (10) on which a chemical amplification resist film (20) is formed, the mask blank (10) comprising a substrate (12), a light shielding film (13) provided on the substrate (12), and a resist substrate film (18) provided on the light shielding film (13), for suppressing the deactivation of the chemical amplification resist film (20). When the light shielding film (13) is etched using the patterned chemical amplification resist film (20) as a mask, the etching rate of the deactivation preventive film (18) is higher than the etching rate of the chemical amplification resist film (20). |
