| 摘要 |
An integrated solid state memory device includes addressable memory locations. In use, an address port receives an address identifying at least one memory location and associated verification information (e.g., parity or error correcting information) for verifying the address. Decoding logic is responsive to a received address to decode the address and verification logic is responsive to a received address and a received verification portion to verify the received address. By providing address verification within a solid state memory device, it is possible to ensure a higher security of operation of a computer system incorporating such a memory device, as errors which might develop, for example, between a memory controller and individual memory devices can be detected. As well as being useful for normal operation, such a memory device facilitates checking of the operating limits of a system as bus speeds and memory access speeds increase. The verification logic can be configured, for example, to prevent access to or modification of the memory locations and/or in the case of a read operation, to prevent output from the device of the content of an addressed memory location where address verification is negative. An error signal could also be generated where address verification is negative. The error signal could be used simply to report a fault or to cause a retry of the addressing operation. Where the memory device includes separate memory banks, the address verification could be performed at one or more levels within the device, for example down to the memory bank level. |
