CAP LAYER INCLUDING ALUMINUM NITRIDE FOR NITRIDE-BASED TRANSISTOR, AND METHOD OF FABRICATING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a Group III-nitride high electron mobility transistor (HEMT) and a method of fabricating the same. SOLUTION: There is provided a high electron mobility transistor including a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent to the surface of the cap layer that is remote from a barrier layer on which the cap layer is provided. There is provided a high electron mobility transistor including a cap layer, having a doped region adjacent to the surface of the cap layer that is remote from the barrier layer on which the cap layer is provided; as well as, a Graphitic BN passivation structure for a wide band gap semiconductor device; oxygen anneal of a passivation structure; and an ohmic contact without a recess. COPYRIGHT: (C)2008,JPO&INPIT