PROCESS FOR PROCEEDING A SILICON SINGLE CRYSTAL WITH LOW DEFECT DENSITY,申请号EP19960303989-传众专利搜索

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发明名称	PROCESS FOR PROCEEDING A SILICON SINGLE CRYSTAL WITH LOW DEFECT DENSITY
摘要
申请公布号	EP0747513(B1)	申请公布日期	1999.09.15
申请号	EP19960303989	申请日期	1996.06.03
申请人	SHIN-ETSU HANDOTAI COMPANY LIMITED	发明人	TAKANO, KIYOTAKA;KITAGAWA, KOUJI;IINO, EIICHI;KIMURA, MASANORI;YAMAGISHI, HIROTOSHI;SAKURADA, MASAHIRO
分类号	C30B15/00;C30B15/20;C30B29/06;C30B33/02;H01L21/208;(IPC1-7):C30B15/00	主分类号	C30B15/00
代理机构		代理人
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