Method for forming wiring for a semiconductor device

摘要

On a semiconductor substrate, an SiO2 layer as an insulating layer and an intermediate insulating layer are stacked successively. The intermediate insulating layer selectively has an opening portion and a copper wiring is formedwithin the opening portion. The copper wiring is covered with an anti-oxidation layer. The anti-oxidation layer is formed of copper sulfide so that it becomes unnecessary to form another anti-oxidation layer which does not contain copper, the treatment in the vacuum can be simplified or thermal treatment step at high temperatures can be omitted.