Programming method for nonvolatile memories

摘要

A programming method for a floating gate memory circuit (100) includes a block erase (step 81) in which a first programming signal is applied to memory cells of a selected block of the memory to store a first value of charge in the memory cells of the block. Data is programmed by applying a second programming signal to a first memory cell to store a second value in the first memory cell (step 83). A third programming signal is applied to a second memory cell to write a correction charge that compensates for a change in the first value of charge induced by the second programming signal (step 84).