| 摘要 |
The semiconductor device comprises an (AlxGa1-x)InP layer 20 epitaxially grown on a semiconductor substrate 10 and having a region where the (AlxGa1-x)InP layer 20 has a spontaneous superlattice broken to have a disordered configuration of Al, In and Ga in plane of a Group III atomic layer; and a semiconductor layer 22 epitaxially grown on the (AlxGa1-x)InP layer 20 and having the same conductivity type as the (AlxGa1-x)InP layer 20. In forming the semiconductor layer on the (AlxGa1-x)InP layer, the spontaneous superlattice of the ground (AlxGa1-x)InP layer is broken, whereby the interface between the (AlxGa1-x)InP layer and the semiconductor layer has less traps. Accordingly, low contact resistance can be obtained between the (AlxGa1-x)InP layer and the semiconductor layer.
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