发明名称 Electrode for plasma etching
摘要 Disclosed is an electrode for plasma etching, which is inexpensive and is capable of reducing the generation of dust and keeping a high electrode performance. The electrode includes a portion to be consumed by plasma and the remaining portion, wherein the portion to be consumed by plasma is formed of metal silicon or a glassy carbon material, and the remaining portion is formed of a carbon material covered with a film of a glassy carbon material.
申请公布号 US5951814(A) 申请公布日期 1999.09.14
申请号 US19970837468 申请日期 1997.04.18
申请人 NISSHINBO INDUSTRIES, INC. 发明人 SAITO, KAZUO;MOCHIZUKI, YASUSHI;YAMAGUCHI, AKIRA
分类号 C23F4/00;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H05H1/00 主分类号 C23F4/00
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