发明名称 |
Electrode for plasma etching |
摘要 |
Disclosed is an electrode for plasma etching, which is inexpensive and is capable of reducing the generation of dust and keeping a high electrode performance. The electrode includes a portion to be consumed by plasma and the remaining portion, wherein the portion to be consumed by plasma is formed of metal silicon or a glassy carbon material, and the remaining portion is formed of a carbon material covered with a film of a glassy carbon material.
|
申请公布号 |
US5951814(A) |
申请公布日期 |
1999.09.14 |
申请号 |
US19970837468 |
申请日期 |
1997.04.18 |
申请人 |
NISSHINBO INDUSTRIES, INC. |
发明人 |
SAITO, KAZUO;MOCHIZUKI, YASUSHI;YAMAGUCHI, AKIRA |
分类号 |
C23F4/00;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H05H1/00 |
主分类号 |
C23F4/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|