发明名称 |
Salient integration mode active pixel sensor |
摘要 |
A salient integration mode active pixel sensor. The active pixel sensor includes an amplify/compare transistor which has a threshold voltage. The amplify/compare transistor couples an input of the amplify/compare transistor to an output of the amplify/compare transistor when the input of the amplify/compare transistor exceeds the threshold voltage. A photo-diode generates a signal voltage which has a voltage level dependent upon the intensity of light received by the photo-diode. The signal voltage is coupled to the input of the amplify/compare transistor. A reset element couples a reset line to the photo-diode and discharges the photo-diode when the reset line is active. A coupling capacitor for couples a select line to the input of the amplify/compare transistor. The select line causes the input to the amplify/compare transistor to exceed the threshold voltage and thereby couple the signal voltage to the output of the amplify/compare transistor. The amplify/compare transistor can be an N-type MOSFET and the reset transistor can be an N-type MOSFET. Further, a back gate of the amplify/compare transistor is generally connected to a circuit ground.
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申请公布号 |
US5952686(A) |
申请公布日期 |
1999.09.14 |
申请号 |
US19970984457 |
申请日期 |
1997.12.03 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
CHOU, ERIC Y.;CHAM, KIT M.;LIN, JANE M. J. |
分类号 |
G01J1/46;H01L27/146;H04N5/335;(IPC1-7):H01L27/14;H01L31/00 |
主分类号 |
G01J1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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