| 摘要 |
A method is presented for depositing a low stress, highly conformal metal thin film, such as tungsten, on a substrate. A substrate is provided, and is heated to a first temperature. A first portion of the metal thin film is deposited on the substrate by reacting a first set of process gases. The deposition of the first portion of the metal thin film is stopped after a first length of time, and the substrate is heated to a second temperature, which is greater than the first temperature. A second portion of the metal thin film is deposited on the substrate by reacting a second set of process gases. The second portion of the metal thin film comprises the same metal as the first portion of the metal thin film. The deposition of the second portion of the metal thin film is stopped after a second length of time. Semiconductor devices having a low stress, highly conformal thin film are also described.
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