发明名称 |
Method of manufacturing a semiconductor memory device |
摘要 |
A storage node electrode is connected to a contact plug via an upper node contact hole. A lower cell plate electrode composed of an N type silicon film and an N type silicon film spacer is covered by the storage node electrode via a titanium oxide film as a lower capacitive insulating film and an upper cell plate electrode composed of an N type silicon film connected to the lower cell plate electrode covers the storage node electrode via a titanium oxide film as an upper capacitive insulating film. Thus, in a DRAM having a stacked and COB type memory, a surface ratio of the storage node electrode, contributing to a capacitor, is increased.
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申请公布号 |
US5953609(A) |
申请公布日期 |
1999.09.14 |
申请号 |
US19970962542 |
申请日期 |
1997.10.31 |
申请人 |
NEC CORPORATION |
发明人 |
KOYAMA, KUNIAKI;DRYNAN, JOHN MARK |
分类号 |
H01L27/04;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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