发明名称 Method of manufacturing thin film transistor
摘要 The manufacturing processes can be simplified and the reliability can be improved. A method of processing a thin film includes a first process of selectively forming a resist pattern on a ground surface, a second process of forming a thin film on the ground surface and a surface of the resist pattern, and a third process of removing the resist pattern to selectively remove the thin film deposited on the former, i.e., carrying out the lift-off, thereby the thin film process for a desired pattern being carried out.
申请公布号 US5953595(A) 申请公布日期 1999.09.14
申请号 US19960721948 申请日期 1996.09.27
申请人 SONY CORPORATION 发明人 GOSAIN, DHARAM PAL;WESTWATER, JONATHAN;NAKAGOE, MIYAKO;USUI, SETSUO
分类号 G03F7/42;H01L21/027;H01L21/306;H01L21/336;H01L29/786;(IPC1-7):H01L21/00 主分类号 G03F7/42
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