发明名称 |
Method of manufacturing thin film transistor |
摘要 |
The manufacturing processes can be simplified and the reliability can be improved. A method of processing a thin film includes a first process of selectively forming a resist pattern on a ground surface, a second process of forming a thin film on the ground surface and a surface of the resist pattern, and a third process of removing the resist pattern to selectively remove the thin film deposited on the former, i.e., carrying out the lift-off, thereby the thin film process for a desired pattern being carried out.
|
申请公布号 |
US5953595(A) |
申请公布日期 |
1999.09.14 |
申请号 |
US19960721948 |
申请日期 |
1996.09.27 |
申请人 |
SONY CORPORATION |
发明人 |
GOSAIN, DHARAM PAL;WESTWATER, JONATHAN;NAKAGOE, MIYAKO;USUI, SETSUO |
分类号 |
G03F7/42;H01L21/027;H01L21/306;H01L21/336;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
G03F7/42 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|