发明名称 Display device
摘要 A resin material having a small relative dielectric constant is used as a layer insulation film 114. The resin material has a flat surface. A black matrix or masking film for thin film transistors is formed thereon using a metal material. Such a configuration prevents the problem of a capacity generated between the masking film and a thin film transistor.
申请公布号 US5952708(A) 申请公布日期 1999.09.14
申请号 US19960751338 申请日期 1996.11.18
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI, SHUNPEI
分类号 G02F1/1362;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L23/58;H01L29/04;H01L27/01 主分类号 G02F1/1362
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