| 摘要 |
A semiconductor device has a low lifetime layer in a selective portion of an N-type drain region to prevent a change in the element characteristic due to Fe contaminants, even if the device is kept at a high temperature. An impurity of a concentration of at least 1016 atoms/cm3 is deposited on a first main surface of the N-type drain region, and diffused into the region to a depth of 10 mu m, thereby forming a P-type anode region. An anode metal electrode is formed on the surface of the anode region. A P-type base region and an N-type source region are formed in a second main surface of the N-type drain region by ion injection or the like. A gate electrode is formed above the second main surface with a gate oxide film interposed therebetween. A metal gate electrode is formed in contact with the gate electrode. A source metal electrode is formed on the source region and the base region so as to short-circuit them. The low lifetime layer is formed in a selective portion of the N-type drain region.
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