Optical semiconductor device including a multiple quantum well structure of an AlGaInAs/InP system

摘要

The optical semiconductor device comprises a multiple quantum well structure of an AlGaInAs system material formed on an InP semiconductor substrate. The multiple quantum well structure comprises a barrier layer of a below 1.0 mu m of PL wavelength and a below 4.5 nm of film thickness active layer alternately laid one on another. An above 0.5% compressive strain is applied to the active layer. Thus the AlGaInAs/InP system optical semiconductor can have good temperature characteristics.