| 摘要 |
A method of fabricating an MOS device that includes self-aligned suicides, the method including two amorphization implantations, both of which follow formation of the self-aligned source/drain regions of the device but precede formation of the self-aligned suicides. The first consists of implantation of low-energy heavy ions, preferably of energies 15-20 keV, while the second consists of implantation of more energetic heavy ions, preferably of energies at least 40 keV.
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