发明名称 Method of fabricating semiconductor quantum box
摘要 A method of fabricating a semiconductor quantum box uniform in size and free from processing damages comprising the steps of adsorbing elements classified in VI family of the periodic table onto the surface of a single or multi-quantum well structure composed of semiconductors; growing crystallites of a semiconductor or a metal by liquid-drop epitaxy; applying chemical etching to the single or multi-quantum well structure with the use of the crystallites as a mask, thereby removing areas of the single or multi-quantum well structure where the crystallites haven't grown on the surface; removing the crystallites used as mask by chemical etching; and filling a semiconductor into the areas of the single or multi-quantum well structure removed in the afore step.
申请公布号 US5951754(A) 申请公布日期 1999.09.14
申请号 US19970932829 申请日期 1997.09.18
申请人 NATIONAL RESEARCH INSTITUTE FOR METALS 发明人 KOGUCHI, NOBUYUKI;ISHIGE, KEIKO;WATANABE, KATSUYUKI;LEE, CHEA DEAK
分类号 H01L21/306;H01L21/20;H01L21/203;H01L21/338;H01L29/778;H01L29/812;H01S5/00;(IPC1-7):C30B19/00 主分类号 H01L21/306
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