发明名称 |
Method of fabricating semiconductor quantum box |
摘要 |
A method of fabricating a semiconductor quantum box uniform in size and free from processing damages comprising the steps of adsorbing elements classified in VI family of the periodic table onto the surface of a single or multi-quantum well structure composed of semiconductors; growing crystallites of a semiconductor or a metal by liquid-drop epitaxy; applying chemical etching to the single or multi-quantum well structure with the use of the crystallites as a mask, thereby removing areas of the single or multi-quantum well structure where the crystallites haven't grown on the surface; removing the crystallites used as mask by chemical etching; and filling a semiconductor into the areas of the single or multi-quantum well structure removed in the afore step.
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申请公布号 |
US5951754(A) |
申请公布日期 |
1999.09.14 |
申请号 |
US19970932829 |
申请日期 |
1997.09.18 |
申请人 |
NATIONAL RESEARCH INSTITUTE FOR METALS |
发明人 |
KOGUCHI, NOBUYUKI;ISHIGE, KEIKO;WATANABE, KATSUYUKI;LEE, CHEA DEAK |
分类号 |
H01L21/306;H01L21/20;H01L21/203;H01L21/338;H01L29/778;H01L29/812;H01S5/00;(IPC1-7):C30B19/00 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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