| 摘要 |
A media compatible microsensor structure (11) for sensing an environmental condition in a harsh media includes an inorganic protective film (17) covering portions of the structure that will be exposed to the harsh media, e.g. the walls of a semi-conductor pressure sensor cavity. E.g. a silicon oxide, nitride, or carbide film is formed by plasma enhanced chemical vapour deposition (PECVD) below 450 or 200 degrees Celsius with a thickness in a range from 0.2 to 1.5 micro meters. Also metals or their silicides may be used: Al,Au,Pt,V,W,Ti,Cr,Ni. <IMAGE> |
