Semiconductor device e.g. power semiconductor with trench MOS gate

摘要

The semiconductor device has a semiconductor substrate (1-4) with a trench (300) having an insulating film (11) on its inside walls, overlaid by a structured silicon film used for formation of a gate electrode (13) within the trench, having a head section projecting beyond the surface of the semiconductor substrate. The width of the head section is at least 1.3 times the diameter of the inside wall of the trench. An Independent claim for a manufacturing method for a semiconductor device is also included.