Chemical field effect transistor with carbon gate electrode

摘要

Chemical field effect transistor consists of source and drain regions (11, 12) with electrical contacts (15) and a gate electrode on a semiconductor substrate (5). The gate electrode is a carbon electrode. Independent claims are also included for: (1) the production of a chemical field effect transistor comprising: (i) arranging source and drain regions (11, 12) and electrical contacts (15) on a semiconductor substrate (5); and (ii) preparing a gate electrode (13); (2) the preparation of carbon layers comprising: (i) applying a carbonaceous layer (3) to a substrate (5); and (ii) making regions of the carbonaceous layer amorphous by ion implantation; and (3) a CHEMFET array having a number of the above chemical effect transistors.